Integrated Silicon Solution, a developer of advanced memory solutions, announced it has begun sampling production units of its new 1-gigabit (1Gbit) DDR3 DRAMs with ECC. The new product has an embedded Error Correcting Code (ECC), which detects and corrects bit errors on-the-fly. It requires no monitoring, nor intervention to use, yet it is backward compatible with standard DDR3.
The 1Gbit DDR3 device is the IS46TR16640ED, which is organized as 64Mbx16, packaged in a 96-ball BGA, and operates at 1.5 V. ISSI is also offering IS46TR81280ED, which is organized as 128 Mbx8, packaged in a 78-ball BGA, and operates at 1.5 V. Both are available in three automotive temperature grade options: A1, which operates over -40° to 95° C; A2, which operates over -40° to 105° C; and A3, which operates over -40° to 125° C. This adds to the DDR3 SDRAM product family and ISSI’s extensive selection of DRAMs. Just as ISSI is doing with its other DRAM products, ISSI is able to provide the long lifecycle product support as required by customer applications in automotive, industrial and other high-reliability market segments.
In addition to the new DDR3 with ECC, ISSI offers a broad line of SDR, mobile SDR/DDR, DDR, DDR2 and DDR3 products, as well as a comprehensive line of asynchronous and synchronous SRAMs with densities from 64 Kb to 72 Mb, 256 Kb to 256 Mb automotive grade flash memory products and analog & mixed signal products. And ISSI supports a range of known good die devices in its portfolio.
Integrated Silicon Solution