Infineon Technologies AG has introduced a radiation-hardened-by-design 512 Mbit QSPI NOR Flash memory for space and extreme environment applications. The device features a quad serial peripheral interface operating at 133 MHz and is QML-qualified for use with space-grade FPGAs and microprocessors. Developed in collaboration with the U.S. Air Force Research Laboratory, Space Vehicles Directorate (AFRL), and Microelectronics Research Development Corporation (Micro-RDC), the memory is based on Infineon’s SONOS (Silicon-Oxide Nitride-Oxide-Silicon) charge gate trap technology. It operates at speeds up to 30 percent faster than lower-density alternatives.
The device utilizes SONOS technology to achieve a combination of density and speed, along with radiation performance. It offers endurance of up to 10,000 P/E cycles and up to 10 years of data retention. The 133 MHz QSPI interface enables fast data transfer rates for space-grade FPGA and processors. The memory is available in two package options: a ceramic QFP (QML-V) package occupying a 1″ x 1″ board area and a smaller plastic TQFP (QML-P) measuring 0.5″ x 0.8″. The device is designed for TID/SEE performance in space FPGA boot code solutions and meets QML-V/P with DLAM certification.
Typical applications for this device include storing configuration images for space-grade FPGAs and standalone boot code storage for space-grade multi-core processors. The 512 Mbit QML-qualified NOR Flash is currently available from Infineon Technologies.
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