Low-voltage 64-Mbit serial flash memory lets battery-powered devices consume less power

A new 1.8V Serial Quad I/O SuperFlash memory device is now available from Microchip Technology Inc. The SST26WF064C, a low-voltage 64 megabit device, combines Dual Transfer Rate (DTR) with proprietary SuperFlash NOR Flash technology, making it ideal for wireless and battery-powered applications. DTR gives customers the ability to output data on both edges of the clock, which reduces overall data access time and power consumption. SuperFlash technology also reduces power consumption by providing the industry’s fastest erase times. Typical chip erase time for the SST26WF064C is between 35 and 50 milliseconds (ms), whereas competitive Flash devices take more than 30 seconds to erase.

“Microchip continues to invest in and introduce memory products based on SuperFlash technology,” said Randy Drwinga, vice president of Microchip’s Memory Products business unit. “The SST26WF064C is our highest-density low-voltage device to date and, along with other products, we will continue to offer them for the long product life cycles of our automotive, industrial and medical customers.”

The SST26WF064C also comes with a hardware-controlled reset functionality enabling a robust device reset. Most serial Flash devices in the market do not support a hardware reset function due to pin count limitations on the package. With this Microchip device, customers have the option to reconfigure the HOLD# pin for this reset function.

Operating at frequencies reaching 104 MHz, the device enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on Static Random Access Memory (SRAM). The new device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial Flash devices. The SST26WF064C also supports full command-set compatibility to the traditional Serial Peripheral Interface (SPI) protocol.

Microchip’s high-performance SuperFlash technology also means the device is based on a proprietary split-gate Flash memory cell, giving additional capabilities such as high endurance cycling of up to 100,000 erase/write cycles, data retention of over 100 years and the industry’s fastest erase times.

 

Developers can begin designing with the SST26WF064C Flash memory today using Verilog and IBIS models as well as device drivers.

The SST26WF064C is offered in a variety of package options including an 8-contact WDFN (6 mm x 5 mm), 8-lead SOIJ (5.28 mm), 16-lead SOIC (7.50 mm) and 24-ball TBGA (8 mm x 6 mm). Devices are available today in volume production starting at $2.05 each in 10,000 unit quantities.