Leti, a research institute of CEA Tech, demonstrated significant improvements in the field of memory systems at IEDM 2017 this week. These include reconfiguring Static Random-Access Memory (SRAM) into Content-Addressable Memory (CAM), improving non-volatile crossbar memories and using advanced Tunnel Field-Effect Transistors (TFET). Another breakthrough presents a high-density SRAM bitcell on Leti’s CoolCubeTM 3D platform, […]