X-FAB Silicon Foundries has introduced a new Flash memory capability for its XP018 high-voltage automotive process. This new Flash IP leverages X-FAB’s already widely proven Silicon Oxide Nitride Oxide Silicon (SONOS) technology, which offers a combination of elevated levels of performance and best-in-class reliability. Fully compliant with stringent AEC100-grade 0 automotive specification, it can withstand […]
Memory
Arm-based processors deliver 10x performance on AI and high-performance computing tasks
NVIDIA announced its first data center CPU, an Arm-based processor that will deliver 10x the performance of today’s fastest servers on the most complex AI and high-performance computing workloads. The result of more than 10,000 engineering years of work, the NVIDIA Grace CPU is designed to address the computing requirements for the world’s most advanced […]
Integrated development environment now handles RE MCUs
Embedded developers can now use SEGGER Embedded Studio IDE with the Renesas RE Family of microcontrollers (MCUs). Embedded Studio is SEGGER’s cross-platform integrated development environment (IDE) for embedded systems development. The editor is quick to start up and the build process is blazingly fast, saving precious working hours. Embedded Studio contains SEGGER’s own runtime and […]
nvSRAM qualified to QML-Q and high-reliability industrial specifications
Infineon Technologies LLC announced the availability of its second-generation non-volatile Static RAMs (nvSRAM). The new generation of devices are qualified for QML-Q and high-reliability industrial specifications to support demanding non-volatile code storage and data-logging applications in harsh environments, including aerospace and industrial applications. The 256 kb STK14C88C and 1 Mb STK14CA8C nvSRAMs are qualified in […]
DDR5 memory boasts improved concurrency, built-in ECC
Longsys Electronics launches the Longsys DDR5 memory module (ES1). The company has done so in order to keep up with the development of storage technologies, to meet expectations from industry professionals and users regarding future product technology development, and to provide more possibilities for the future of storage industry applications. Moreover, Longsys’ FORESEE, a technical storage […]
Low-power memory qualified for automotive safety applications
The industry’s first automotive low-power DDR5 DRAM (LPDDR5) memory is hardware-evaluated to meet the most stringent Automotive Safety Integrity Level (ASIL), ASIL D. The solution is part of Micron’s new portfolio of memory and storage products targeted for automotive functional safety based on the International Organization for Standardization (ISO) 26262 standard. Micron’s functional safety-evaluated DRAM […]
3D flash memory features low read latency, fast I/O
Kioxia Corporation and Western Digital Corp. announced that the companies have developed their sixth-generation, 162-layer 3D flash memory technology. Marking the next milestone in the companies’ 20-year joint-venture partnership, this is the companies’ highest density and most advanced 3D flash memory technology to date, utilizing a wide range of technology and manufacturing innovations. This sixth-generation […]
Evaluation kit checks out ultra-low power e-paper displays
Pervasive Displays has introduced the EXT3 extension kit and evaluation board, with support for its entire range of iTC ultra-low-power e-paper displays for industrial, commercial, and retail applications, along with extensive software libraries to help reduce its customers’ engineering effort. Many manufacturers are looking to move away from TN/STN displays to an ultra-low power e-paper […]
1α DRAM node enables more power-efficient and reliable memory designs
Micron Technology, Inc. announced volume shipment of 1α (1-alpha) node DRAM products built using the world’s most advanced DRAM process technology and offering major improvements in bit density, power, and performance. This milestone reinforces Micron’s competitive strength and complements its recent breakthroughs with the world’s fastest graphics memory and the first-to-ship 176-layer NAND. Micron plans […]
176-layer, 4D NAND flash improves bit productivity
SK Hynix Inc. announced the completion of developing the industry’s most multilayered 176-layer 512 Gigabit (Gb) Triple-Level Cell (TLC) 4D NAND flash. The Company provided the samples to controller companies last month to make a solution product. SK Hynix has been promoting 4D technology from the 96-layer NAND flash products that combine Charge Trap Flash […]
